Heterogate junctionless tunnel field-effect transistor: future of low-power devices
Crossref DOI link: https://doi.org/10.1007/s10825-016-0936-9
Published Online: 2016-11-29
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rahi, Shiromani Balmukund
Asthana, Pranav
Gupta, Shoubhik
License valid from 2016-11-29