Investigation of breakdown performance in $$L_{g}$$ L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
Crossref DOI link: https://doi.org/10.1007/s10825-017-1086-4
Published Online: 2017-10-06
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ajayan, J.
Ravichandran, T.
Prajoon, P.
Pravin, J. Charles
Nirmal, D.
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