An ab initio study of the structural and optoelectronic properties of AlxGa1−xN (x = 0, 0.125, 0.375, 0.625, 0.875, and 1) semiconductors
Crossref DOI link: https://doi.org/10.1007/s10825-019-01423-2
Published Online: 2019-12-10
Published Print: 2020-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kafi, A. http://orcid.org/0000-0002-8524-9934
Driss Khodja, F.
Saadaoui, F.
Chibani, S.
Bentayeb, A.
Driss Khodja, M.
Text and Data Mining valid from 2019-12-10
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Article History
First Online: 10 December 2019