The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor
Crossref DOI link: https://doi.org/10.1007/s10825-020-01445-1
Published Online: 2020-01-17
Published Print: 2020-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Naderi, Ali http://orcid.org/0000-0001-9891-9805
Ghodrati, Maryam
Baniardalani, Sobhi
Funding for this research was provided by:
Kermanshah University of Technology (S/P/T/1191)
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Article History
First Online: 17 January 2020