An analytical model of the surface-potential-based source-pocket-doped cylindrical-gate tunnel FET with a work-function-modulated metal gate
Crossref DOI link: https://doi.org/10.1007/s10825-020-01465-x
Published Online: 2020-02-14
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dash, Sidhartha
Mishra, Guru Prasad http://orcid.org/0000-0003-0326-7619
Text and Data Mining valid from 2020-02-14
Version of Record valid from 2020-02-14
Article History
First Online: 14 February 2020
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: The authors declare that they have no conflicts of interest.