Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)
Crossref DOI link: https://doi.org/10.1007/s10825-020-01498-2
Published Online: 2020-04-22
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Venish Kumar, T.
Balamurugan, N. B.
Text and Data Mining valid from 2020-04-22
Version of Record valid from 2020-04-22
Article History
First Online: 22 April 2020