On reliable modeling of substrate/buffer loading effects in a gallium nitride high-electron-mobility transistor on silicon substrate
Crossref DOI link: https://doi.org/10.1007/s10825-020-01582-7
Published Online: 2020-09-14
Published Print: 2021-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jarndal, Anwar http://orcid.org/0000-0002-1873-2088
Hussein, Ahmed S.
Text and Data Mining valid from 2020-09-14
Version of Record valid from 2020-09-14
Article History
Received: 4 May 2020
Accepted: 27 August 2020
First Online: 14 September 2020