Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm)
Crossref DOI link: https://doi.org/10.1007/s10825-021-01693-9
Published Online: 2021-05-06
Published Print: 2021-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khaliq, Afshan http://orcid.org/0000-0002-5400-191X
Zhang, Shuo
Text and Data Mining valid from 2021-05-06
Version of Record valid from 2021-05-06
Article History
Received: 4 December 2020
Accepted: 12 March 2021
First Online: 6 May 2021