A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature
Crossref DOI link: https://doi.org/10.1007/s10825-021-01724-5
Published Online: 2021-05-31
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gavoshani, Amir
Orouji, Ali A. http://orcid.org/0000-0002-8664-6069
Text and Data Mining valid from 2021-05-31
Version of Record valid from 2021-05-31
Article History
Received: 13 December 2020
Accepted: 22 May 2021
First Online: 31 May 2021