Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Crossref DOI link: https://doi.org/10.1007/s10832-017-0095-9
Published Online: 2017-06-24
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Hong-Yu
Brivio, Stefano
Chang, Che-Chia
Frascaroli, Jacopo
Hou, Tuo-Hung
Hudec, Boris
Liu, Ming
Lv, Hangbing
Molas, Gabriel
Sohn, Joon
Spiga, Sabina
Teja, V. Mani
Vianello, Elisa
Wong, H.-S. Philip
License valid from 2017-06-24