A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets
Crossref DOI link: https://doi.org/10.1007/s10836-016-5573-5
Published Online: 2016-02-27
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Yuanqing
Li, Lixiang
Ma, Yuan
Chen, Li
Liu, Rui
Wang, Haibin
Wu, Qiong
Newton, Michael
Chen, Mo
Text and Data Mining valid from 2016-02-27