A Near-Threshold Soft Error Resilient 7T SRAM Cell with Low Read Time for 20 nm FinFET Technology
Crossref DOI link: https://doi.org/10.1007/s10836-017-5659-8
Published Online: 2017-05-22
Published Print: 2017-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Niaraki Asli, Rahebeh
Taghipour, Shiva
License valid from 2017-05-22