A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient
Crossref DOI link: https://doi.org/10.1007/s10836-017-5694-5
Published Online: 2017-12-01
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yi, Tengyue http://orcid.org/0000-0002-1848-0212
Liu, Yi
Yang, Yintang
Funding for this research was provided by:
Equipment Pre-research Project of China (41424050607)
License valid from 2017-12-01