Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Crossref DOI link: https://doi.org/10.1007/s10853-015-8990-4
Published Online: 2015-04-02
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tsukamoto, Takahiro
Hirose, Nobumitsu
Kasamatsu, Akifumi
Mimura, Takashi
Matsui, Toshiaki
Suda, Yoshiyuki
Text and Data Mining valid from 2015-04-02