Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
Crossref DOI link: https://doi.org/10.1007/s10853-015-9247-y
Published Online: 2015-07-14
Published Print: 2015-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Simanjuntak, Firman Mangasa
Panda, Debashis
Tsai, Tsung-Ling
Lin, Chun-An
Wei, Kung-Hwa
Tseng, Tseung-Yuen
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (NSC 102-2221-E009-134-MY3)
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