Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates
Crossref DOI link: https://doi.org/10.1007/s10853-016-0427-1
Published Online: 2016-10-14
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Haiyan
Wang, Wenliang
Yang, Weijia
Zhu, Yunnong
Lin, Zhiting
Li, Guoqiang
Funding for this research was provided by:
National Natural Science Foundation of China (51572091, 51372001)
License valid from 2016-10-14