Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Crossref DOI link: https://doi.org/10.1007/s10853-016-9811-0
Published Online: 2016-02-22
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jung, Hanearl
Kim, Woo-Hee
Oh, Il-Kwon
Lee, Chang-Wan
Lansalot-Matras, Clement
Lee, Su Jeong
Myoung, Jae-Min
Lee, Han-Bo-Ram
Kim, Hyungjun
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