The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
Crossref DOI link: https://doi.org/10.1007/s10853-017-1791-1
Published Online: 2017-11-09
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chaibi, F.
Jemai, R.
Aguas, H.
Khemakhem, H.
Khirouni, K. http://orcid.org/0000-0001-8310-1621
License valid from 2017-11-09