Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films
Crossref DOI link: https://doi.org/10.1007/s10854-015-3310-y
Published Online: 2015-06-06
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Na
Hu, Ming
Liang, Ji-Ran
Liu, Xing
Wu, Mai-Jun
Funding for this research was provided by:
National Natural Science Foundation of China (61471264, 61101055)
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