Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators
Crossref DOI link: https://doi.org/10.1007/s10854-016-4426-4
Published Online: 2016-02-03
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Karteri, İbrahim
Karataş, Şükrü
Yakuphanoglu, Fahrettin
Funding for this research was provided by:
TUBİTAK (2211C)
Text and Data Mining valid from 2016-02-03