Influence of total gas partial pressure on the structural formation of SiC thin films deposited by HWCVD technique
Crossref DOI link: https://doi.org/10.1007/s10854-016-5272-0
Published Online: 2016-07-01
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shariatmadar Tehrani, F.
License valid from 2016-07-01