High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition
Crossref DOI link: https://doi.org/10.1007/s10854-016-5585-z
Published Online: 2016-08-24
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sun, Yurun
Dong, Jianrong
Yu, Shuzhen
Zhao, Yongming
He, Yang
Funding for this research was provided by:
National Natural Science Foundation of China (61376065)
Suzhou Science and Technology Project (ZXG2013044)
License valid from 2016-08-24