Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3
Crossref DOI link: https://doi.org/10.1007/s10854-018-9104-2
Published Online: 2018-04-18
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Uribe-Vargas, Hector
Molina-Reyes, Joel
Funding for this research was provided by:
Consejo Nacional de Ciencia y Tecnología
Text and Data Mining valid from 2018-04-18
Article History
Received: 21 November 2017
Accepted: 12 April 2018
First Online: 18 April 2018