Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor
Crossref DOI link: https://doi.org/10.1007/s10854-018-9847-9
Published Online: 2018-08-13
Published Print: 2018-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kahraman, Aysegul http://orcid.org/0000-0002-1836-7033
Gurer, Umutcan
Lok, Ramazan
Kaya, Senol
Yilmaz, Ercan
Text and Data Mining valid from 2018-08-13
Article History
Received: 20 June 2018
Accepted: 8 August 2018
First Online: 13 August 2018