An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit
Crossref DOI link: https://doi.org/10.1007/s10854-020-04113-z
Published Online: 2020-08-05
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gupta, Namrata http://orcid.org/0000-0002-9700-6040
Singh, Sarita
Naugarhiya, Alok
Text and Data Mining valid from 2020-08-05
Version of Record valid from 2020-08-05
Article History
Received: 31 March 2020
Accepted: 26 July 2020
First Online: 5 August 2020