The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K
Crossref DOI link: https://doi.org/10.1007/s10854-021-05284-z
Published Online: 2021-01-30
Published Print: 2021-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Güçlü, Ç. Ş. http://orcid.org/0000-0001-6363-4666
Özdemir, A. F.
Aldemir, D. A.
Altındal, Ş.
Text and Data Mining valid from 2021-01-30
Version of Record valid from 2021-01-30
Article History
Received: 6 November 2020
Accepted: 7 January 2021
First Online: 30 January 2021