Effect of doping concentration and annealing temperature on threshold voltages of bipolar resistive switching in Mn-doped BiFeO3 films
Crossref DOI link: https://doi.org/10.1007/s10971-015-3916-9
Published Online: 2015-12-09
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Luo, Jinming
Zhang, Haining
Wen, Jianping
Yang, Xiaodong
Text and Data Mining valid from 2015-12-09