Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures
Crossref DOI link: https://doi.org/10.1007/s11082-014-0019-8
Published Online: 2014-09-26
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Butkutė, Renata
Stašys, Karolis
Pačebutas, Vaidas
Čechavičius, Bronislovas
Kondrotas, Rokas
Geižutis, Andrejus
Krotkus, Arūnas
Text and Data Mining valid from 2014-09-26