Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded $$\hbox {Al}_\mathrm{x}\hbox {Ga}_\mathrm{1-x}\hbox {N}$$ Al x Ga 1 - x N layer
Crossref DOI link: https://doi.org/10.1007/s11082-014-0060-7
Published Online: 2014-11-09
Published Print: 2015-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gao, Lili
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