Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport
Crossref DOI link: https://doi.org/10.1007/s11082-015-0148-8
Published Online: 2015-03-28
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sheng, Yang
Xia, Chang Sheng
Simon Li, Zhan Ming
Ru, Guo Ping
Text and Data Mining valid from 2015-03-28