Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy
Crossref DOI link: https://doi.org/10.1007/s11082-016-0653-4
Published Online: 2016-07-18
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kozub, Michał A.
Motyka, Marcin
Dyksik, Mateusz
Sęk, Grzegorz
Misiewicz, Jan
Nishisaka, Kazuichi
Maemoto, Toshihiko
Sasa, Shigehiko
Funding for this research was provided by:
National Science Center (PL) (DEC-2011/03/D/ST3/02640.)
License valid from 2016-07-18