Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films
Crossref DOI link: https://doi.org/10.1007/s11082-016-0745-1
Published Online: 2016-10-01
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tsai, Tang-Yi
Chen, Tao-Hsing
Tu, Sheng-Lung
Su, Yen-Hsun
Shen, Yun-Hwei
Yang, Chia-Lin
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (Most 105-2221-E-151-026)
License valid from 2016-10-01