Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT
Crossref DOI link: https://doi.org/10.1007/s11141-016-9685-7
Published Online: 2016-08-10
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mikhaylovich, S. V.
Fedorov, Yu.V.
License valid from 2016-07-01