High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–xTe with a Converted Near-Surface Layer
Crossref DOI link: https://doi.org/10.1007/s11182-018-1344-3
Published Online: 2018-04-14
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ismailov, N. D.
Talipov, N. Kh.
Voitsekhovskii, A. V.
Text and Data Mining valid from 2018-04-01
Article History
Received: 14 May 2017
First Online: 14 April 2018