Schotky Barrier Height and Calculation of Voltage–Current Characteristics of Al/n-(SiC)1–x(AlN)x Diodes And 4H–SiC Heterojunctions
Crossref DOI link: https://doi.org/10.1007/s11182-020-01889-9
Published Online: 2020-01-14
Published Print: 2020-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Altukhov, V. I.
Sankin, A. V.
Antonov, V. F.
Filipova, S. V.
Mityugova, O. A.
Text and Data Mining valid from 2020-01-01
Version of Record valid from 2020-01-01
Article History
Received: 6 July 2018
Revised: 20 March 2019
First Online: 14 January 2020