A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time
Crossref DOI link: https://doi.org/10.1007/s11432-014-5243-0
Published Online: 2015-02-12
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, LiFang
Wu, Dong
Liu, XueMei
Huo, ZongLiang
Liu, Ming
Pan, LiYang
Text and Data Mining valid from 2015-02-12