Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling
Crossref DOI link: https://doi.org/10.1007/s11432-014-5245-y
Published Online: 2015-01-08
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lu, GuangYi
Wang, Yuan
Zhang, LiZhong
Cao, Jian
Jia, Song
Zhang, Xing
Text and Data Mining valid from 2015-01-08