Single event upset induced by single event double transient and its well-structure dependency in 65-nm bulk CMOS technology
Crossref DOI link: https://doi.org/10.1007/s11432-015-5471-y
Published Online: 2016-02-01
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Huang, Pengcheng
Chen, Shuming
Chen, Jianjun
Text and Data Mining valid from 2016-02-01