GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs
Crossref DOI link: https://doi.org/10.1007/s11432-017-9264-0
Published Online: 2018-04-16
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhang, Bingxin
An, Xia
Hu, Xiangyang
Li, Ming
Zhang, Xing
Huang, Ru
Text and Data Mining valid from 2018-04-16
Article History
Received: 11 August 2017
Accepted: 10 October 2017
First Online: 16 April 2018