Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs
Crossref DOI link: https://doi.org/10.1007/s11432-018-9429-2
Published Online: 2019-01-18
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Xie, Qian
Chen, Chen
Liu, Mingjun
Xia, Shuang
Wang, Zheng
Text and Data Mining valid from 2019-01-18
Article History
Received: 15 January 2018
Revised: 3 March 2018
Accepted: 27 March 2018
First Online: 18 January 2019