Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
Crossref DOI link: https://doi.org/10.1007/s11432-019-2716-5
Published Online: 2020-11-02
Published Print: 2020-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tian, Guoliang
Bi, Jinshun
Xu, Gaobo
Xi, Kai
Yang, Xueqin
Sandip, Majumdar
Yin, Huaxiang
Xu, Qiuxia
Wang, Wenwu
Text and Data Mining valid from 2020-11-02
Version of Record valid from 2020-11-02
Article History
Received: 11 August 2019
Revised: 6 October 2019
Accepted: 25 November 2019
First Online: 2 November 2020