Design of a high-performance 12T SRAM cell for single event upset tolerance
Crossref DOI link: https://doi.org/10.1007/s11432-020-3123-2
Published Online: 2021-09-03
Published Print: 2021-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Qi, Chunhua
Zhang, Yanqing
Ma, Guoliang
Liu, Chaoming
Wang, Tianqi
Xiao, Liyi
Huo, Mingxue
Zhai, Guofu
Text and Data Mining valid from 2021-09-03
Version of Record valid from 2021-09-03
Article History
Received: 3 July 2020
Revised: 11 September 2020
Accepted: 16 November 2020
First Online: 3 September 2021