High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Crossref DOI link: https://doi.org/10.1007/s11432-022-3707-2
Published Online: 2023-10-07
Published Print: 2023-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Fan, Yutong
Liu, Xi
Huang, Ren
Wen, Yu
Zhang, Weihang
Zhang, Jincheng
Liu, Zhihong
Zhao, Shenglei
Text and Data Mining valid from 2023-10-07
Version of Record valid from 2023-10-07
Article History
Received: 23 August 2022
Revised: 1 November 2022
Accepted: 15 February 2023
First Online: 7 October 2023