A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications
Crossref DOI link: https://doi.org/10.1007/s11432-023-3763-3
Published Online: 2023-05-18
Published Print: 2023-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Liang
Wang, Huimin
Huang, Qianqian
Huang, Ru
Text and Data Mining valid from 2023-05-18
Version of Record valid from 2023-05-18
Article History
Received: 13 March 2023
Revised: 17 April 2023
Accepted: 19 April 2023
First Online: 18 May 2023