Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications
Crossref DOI link: https://doi.org/10.1007/s11432-023-3802-8
Published Online: 2023-09-21
Published Print: 2023-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yan, Shengzhe
Cong, Zhaori
Lu, Nianduan
Yue, Jinshan
Luo, Qing
Text and Data Mining valid from 2023-09-21
Version of Record valid from 2023-09-21
Article History
Received: 1 February 2023
Revised: 29 March 2023
Accepted: 9 June 2023
First Online: 21 September 2023