Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices
Crossref DOI link: https://doi.org/10.1007/s11661-015-3040-z
Published Online: 2015-07-08
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Akin, Seçkİn
Sönmezoğlu, Savaş
Text and Data Mining valid from 2015-07-08
Version of Record valid from 2015-07-08
Article History
First Online: 8 July 2015