Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Crossref DOI link: https://doi.org/10.1007/s11664-014-3536-0
Published Online: 2014-12-04
Published Print: 2015-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wu, Fangzhen
Wang, Huanhuan
Raghothamachar, Balaji
Dudley, Michael
Chung, Gil
Zhang, Jie
Thomas, Bernd
Sanchez, Edward K.
Mueller, Stephan G.
Hansen, Darren
Loboda, Mark J.
Zhang, Lihua
Su, Dong
Kisslinger, Kim
Stach, Eric
Text and Data Mining valid from 2014-12-04