SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films
Crossref DOI link: https://doi.org/10.1007/s11664-015-3757-x
Published Online: 2015-04-11
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pitthan, E.
Gobbi, A.L.
Boudinov, H.I.
Stedile, F.C.
Text and Data Mining valid from 2015-04-11