Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy
Crossref DOI link: https://doi.org/10.1007/s11664-015-3782-9
Published Online: 2015-05-06
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Zhichong
Zhang, Xiangpeng
Wu, Yigui
Hu, Zhiyu
Text and Data Mining valid from 2015-05-06