Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates
Crossref DOI link: https://doi.org/10.1007/s11664-015-3832-3
Published Online: 2015-05-16
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, W. Z.
Selvaraj, S. L.
Win, K. T.
Dolmanan, S. B.
Bhat, T.
Yakovlev, N.
Tripathy, S.
Lo, G. Q.
Text and Data Mining valid from 2015-05-16